Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
Identifieur interne : 00FA92 ( Main/Repository ); précédent : 00FA91; suivant : 00FA93Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
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Abstract
We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple quantum wells (MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PL spectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells</title><author><name sortKey="Kuokstis, E" uniqKey="Kuokstis E">E. Kuokstis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, J" uniqKey="Zhang J">J. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Ryu, M Y" uniqKey="Ryu M">M.-Y. Ryu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Eengineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name></author></titleStmt><publicationStmt><idno type="inist">02-0020226</idno><date when="2001-12-24">2001-12-24</date><idno type="stanalyst">PASCAL 02-0020226 AIP</idno><idno type="RBID">Pascal:02-0020226</idno><idno type="wicri:Area/Main/Corpus">010190</idno><idno type="wicri:Area/Main/Repository">00FA92</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Atomic layer epitaxial growth</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Localized states</term><term>Optical polarization</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867D</term><term>7855C</term><term>7321F</term><term>8107S</term><term>7135G</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Puits quantique semiconducteur</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Méthode ALE</term><term>Exciton</term><term>Etat localisé</term><term>Photoluminescence</term><term>Polarisation optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al<sub>0.22</sub>In<sub>0.02</sub>Ga<sub>0.76</sub>N/Al<sub>0.38</sub>In<sub>0.01</sub>Ga<sub>0.61</sub>N multiple quantum wells (MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PL spectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>KUOKSTIS (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHANG (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>RYU (M.-Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="05" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>KHAN (M. Asif)</s1></fA11><fA11 i1="07" i2="1"><s1>GASKA (R.)</s1></fA11><fA11 i1="08" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Eengineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1></fA14><fA14 i1="03"><s1>ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1><sZ>8 aut.</sZ></fA14><fA20><s1>4375-4377</s1></fA20><fA21><s1>2001-12-24</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0020226</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al<sub>0.22</sub>In<sub>0.02</sub>Ga<sub>0.76</sub>N/Al<sub>0.38</sub>In<sub>0.01</sub>Ga<sub>0.61</sub>N multiple quantum wells (MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PL spectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C21F</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05Y</s0></fC02><fC02 i1="05" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7321F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8107S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7135G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Méthode ALE</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Atomic layer epitaxial growth</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Excitons</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Etat localisé</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Localized states</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Polarisation optique</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Optical polarization</s0></fC03><fN21><s1>001</s1></fN21><fN47 i1="01" i2="1"><s0>0152M000036</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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